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| BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features * * * * High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 -- 0.63 3.68 2.67 1.40 Mechanical Data * * * * Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Approx Weight: 0.18 grams C C D E G H D BOTTOM VIEW SG D All Dimensions in mm H G H Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25C unless otherwise specified Characteristic Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 60 60 20 250 830 -55 +150 Unit V V V mA mW C Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.15 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (Typ.) @ VGS = 0, IF = 0.15A, Tj = 25C Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Drain-Source ON Resistance @ TA = 25C unless otherwise specified Symbol -V(BR)DSS -VGS(th) -IGSS -IDSS rDS (ON) RqJA gFS Ciss ton toff Min 60 -- -- -- -- -- -- -- -- -- Typ 70 1.0 -- -- 3.5 -- 150 60 5 25 Max -- 3.0 20 0.5 5.0 150 -- -- -- -- Unit V V nA A W K/W mS pF ns Test Condition ID = 100A, VGS = 0 VGS = VDS, -ID = 1.0mA -VGS = 15V, VDS = 0 -VDS = 25V, VGS = 0 -VGS = 10V, -ID = 0.2A Note 1 -VDS = 10V, -ID = 0.2A, f = 1.0MHz -VDS = 10V, VGS = 0, f = 1.0MHz -VGS = 10V, -VDS = 10V, RD = 100W Thermal Resistance, Junction to Ambient Air Forward Transconductance Input Capacitance Switching Times Turn On Time Turn Off Time Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. DS21902 Rev. D-3 1 of 2 BS250 -ID, (ON) DRAIN SOURCE ON CURRENT (A) 1 500 7V 6V -VGS = 5.5V TA = 25C Pd, POWER DISSIPATION (W) 0.8 (See Note 1) 400 Pulse test width 80s; pulse duty factor 1% 0.6 300 5.0V 0.4 200 4.5V 4.0V 0.2 100 3.0V 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 200 0 0 20 40 60 80 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics -ID, (ON) DRAIN SOURCE ON-CURRENT (mA) 500 TA = 25C 1.0 -VDS = 10V TA = 25C 400 -ID, DRAIN CURRENT (A) Pulse test width 80s; pulse duty factor 1% 0.8 Pulse test width 80s; pulse duty factor 1% 300 -VGS = 5V 0.6 200 4.5V 0.4 4.0V 100 3.5V 3.0V 0.2 0 0 2 4 6 0 8 10 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics -VGS, DRAIN-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Voltage gfs, FORWARD TRANSCONDUCTANCE (mm) gf s, FORWARD TRANSCONDUCTANCE (mm) 500 -VDS = 10V Pulse test width 80s; pulse duty factor 1% 500 -VDS = 10V 400 400 Pulse test width 80s; pulse duty factor 1% 300 300 200 200 100 100 0 0 2 4 6 8 10 0 0 100 200 300 400 500 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Voltage ID, DRAIN CURRENT, (mA) Fig. 6, Transconductance vs. Drain Current DS21902 Rev. D-3 2 of 2 BS250 |
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